摘要
采用溶胶-凝胶结合快速退火工艺在p^+-Si基片上制备了Sr Ti O_3薄膜,构建了Ag/Sr Ti O_3/p^+-Si结构的阻变器件,研究了退火温度对薄膜微观结构、阻变特性的影响。结果表明:不同退火温度下薄膜均呈结晶态,并且随退火温度升高,薄膜晶粒有增大的趋势,当退火温度为750℃时,薄膜的衍射峰不明显并且有杂峰出现。不同退火温度下Ag/Sr Ti O_3/p^+-Si器件都具有明显的双极性阻变特性,但退火温度为850℃与900℃的器件在扫描电压达到某一值时电流会出现一个极小值;经850℃退火处理的器件具有更高的高低电阻比(103～104)。当退火温度为800℃及更高时,器件在高阻态下的导电机制以肖特基势垒发射机制为主;低阻态的电荷传导机制则遵循空间电荷限制电流机制(SCLC)。器件在200次可逆循环测试下,退火温度为850℃时表现出较好的抗疲劳特性。
SrTiO3thin films were deposited on p+-Si substrates by sol-gel technology with rapid thermal annealing method,and the Ag/SrTiO3/p+-Si resistor devices were fabricated.The microstructures and resistance switching properties of the SrTiO3films which annealed at various temperatures were investigated.The results indicate that all the SrTiO3films show crystalline states,and the grain sizes of the films follow with the increase of the annealing temperature,when theannealing temperature reaches750℃,impurity peak appears and the diffraction peaks of the film are not obvious.Bipolar resistive behaviors are observed in Ag/SrTiO3/p+-Si devices at different annealing temperatures,but the current appears the minimum value at a certain voltage when the annealing temperature reaches850℃or higher,and the devices annealed at850℃show a larger high/low resistance ratio of103~104.The dominant resistive switching conduction mechanism of HRS is Schottky barrier emission when the annealing temperature reaches800℃or higher,and the LRS changes to space charge limited current(SCLC).The devices annealed at850℃show better anti-fatigue properties after200cycles.
作者
张文博
王华
许积文
卢晓鹏
刘国保
ZHANG Wenbo;WANG Hua;Xu Jiwen;LU Xiaopeng;LIU Guobao(School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, Guangxi Zhuang Autonomous Region, China)
出处
《电子元件与材料》
CAS
CSCD
2017年第4期46-51,共6页
Electronic Components And Materials
基金
国家自然科学基金资助(No.51262003)
广西自然科学基金资助(No.2015GXNSFAA139253)
