Si掺杂SnO_2基气体传感器抗湿性能研究

Research on anti-humidity of Si-doped SnO_2 gas sensor

研究了以Si掺杂Sn O_2作为热线型气体传感器补偿元件材料来提高Sn O_2基气体传感器抗湿度干扰能力。采用共沉淀法制备Si掺杂Sn O_2作为补偿元件材料,Sb掺杂Sn O_2作为敏感元件材料,并对所制备材料进行表征。考察了Sb掺杂量对传感器响应值影响和Si掺杂Sn O_2对抗湿性能影响,同时讨论了抗湿性能机理。结果表明,敏感元件材料中摩尔比Sb/Sn为6%使Sn O_2基传感器对体积分数1000×10^(-6) H2灵敏度由108 m V提高至435 m V,补偿元件材料摩尔比Si/Sn为0.7%使湿度引起的响应值相对误差降至8.8%。

Si-doped SnO2was taked as reference element material of hot-wire type gas sensor to improve the ability of anti-humidity.Si-doped SnO2as the reference element material and Sb-doped SnO2as the sensitive element material were prepared by coprecipitation method,and the materials were characterized.Meanwhile,the effect of the Sb content on sensor response and the effect of Si-doped SnO2on anti-humidity were investigated.Also the mechanism of anti-humidity was discussed.The results show that the sensor response to1000×10–6(volume fraction)of H2is improved from108mV to435mV when the mole ratio of Sb to Sn is6%,and the relative error of sensor response reduces to8.8%caused by humidity when the mole ratio of Si to Sn is0.7%.