摘要
Silicon carbide (SiC) ber possesses high thermal stability, low density, high speci c strength, good oxidation-ablation resistance, high speci c modulus, especially improved aw tolerance and non-catastrophic mode of failure.Therefore, silicon carbide ber is widely used in aerospace, aviation, nuclear industry, and other elds. The radiation damage which silicon carbide ber will be subject to is inevitable though it is immune to various environments.
