摘要
基于硅基异质集成InP工艺下的硅基与InP层之间的通孔结构,得到其等效电路模型,并提出了一种直接的模型参数提取方法.在0.1~67.0GHz的测量数据中提取得到双通孔结构的等效电路模型参数,模型仿真和测量数据能较好地拟合,验证了模型拓扑结构的准确性.
An equivalent circuit model for through InP via modeling in silicon heterogeneous integration InP technology is presented in this paper.A directly model parameter extraction method is developed.Equivalent circuit model for the double interconnected via structures is extracted base on the measured data from0.1GHz to67.0GHz.An excellent fitting result of the model simulated and measured data validated the accuracy of the modeling methodology proposed here.
作者
陈晓艳
孙玲玲
刘军
CHEN Xiaoyan;SUN Lingling;LIU Jun(Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310008, China)
出处
《杭州电子科技大学学报（自然科学版）》
2017年第1期25-28,共4页
Journal of Hangzhou Dianzi University：Natural Sciences
关键词
异质集成
通孔模型
参数提取
毫米波
heterogeneous integration
via model
parameter extraction
millimeter-wave
