摘要
Single crystal (100) InP samples and (0001) GaN epitaxial layers were irradiated at the Heavy Ion ResearchFacility in Lanzhou (HIRFL) with 86Kr ions at room temperature. The ion fluence was varied from 5×1010 to1×1012 cm?2. Additionally, thin aluminum foils with different thickness (some tens of micrometers) were placed infront of some samples to decelerate the SHI's. Ion beam scanning was used to irradiate the whole sample surfacein a uniform way and maintained normal incidence. To prevent sample heating during high-energy irradiation, theflux was kept constant below 1.3×1010 cm?2 s?1. The modifications of the samples were investigated by XRD.
