摘要
在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提取影响Si C MOSFET开关瞬态过程的关键参数,即开关过程中的dv/dt和di/dt。基于Si C MOSFET的开关过程,分析驱动回路参数对dv/dt和di/dt的影响,并通过PSpice仿真及搭建Si C MOSFET双脉冲测试实验平台进行分析和比较。在此基础上,对基于驱动回路参数的瞬态控制方法进行对比分析,为实际应用中对Si C MOSFET的开关特性改善提供重要的理论基础。
The switching behavior of Silicon Carbide(SiC)MOSFETs is susceptible to theparasitic elements in the system.It manifests non-ideal characteristics of the power pulses,and furtherlimits the system reliability and efficiency.The relationship among the control pulse,the drive pulseand the power pulse is analyzed.Two parameters dv/dt and di/dt are extracted as two critical factorsaffecting the switching behavior of SiC MOSFETs.The impacts of the gate-loop parameters on dv/dtand di/dt are analyzed theoretically and verified through PSpice simulation and experiments.Furthermore,several transient control methods based on the gate-loop parameters are compared,as aguideline for the control of the switching behavior of SiC MOSFETs in real applications.
作者
王旭东
朱义诚
赵争鸣
陈凯楠
Wang Xudong;Zhu Yicheng;Zhao Zhengming;Chen Kainan(State Key Lab of Control and Simulation of Power Systems and Generation Equipments Department of Electrical Engineering Tsinghua University Beijing 100084 China)
出处
《电工技术学报》
EI
CSCD
北大核心
2017年第13期23-30,共8页
Transactions of China Electrotechnical Society
基金
国家自然科学基金重大项目资助(51490680
51490683)
