10～18GHz GaAs MMIC低噪声放大器设计

Design of 10～18GHz GaAs MMIC Low Noise Amplifier

本文研制了一款10~18GHz低噪声放大器芯片,该放大器采用90nm GaAs工艺。放大器采用三级共用电流单电源拓扑,第一级采用源电感匹配,在确保输入端口驻波比的同时使放大器噪声系数最小;第三级采用电阻负反馈拓扑,在保证增益平坦度、输出端口驻波比与输出功率的前提下,尽量降低LNA的噪声系数。在片测试表明,在+5V漏电压工作环境下,放大器静态电流为25mA,增益为24.5dB,增益平坦度为±1dB,噪声系数为1.1dB,1dB增益压缩点输出功率大于9dBm,包含射频GSG与直流偏置压点的芯片尺寸为1.4×0.8mm^2。

This paper introduces a10-18GHz low noise amplifier chip using90nm GaAs process.The amplifier has three-level shared current single power supply topology.The first stage uses sourceinductance matching technique,minimizing the noise figure and input port standing wave ratio.The thirdlevel adopts the resistor negative feedback topology,minimizing the LNA noise figure.Chip test showsin the+5V leakage voltage working environment,the amplifier achieves25mA quiescent current25mA,24.5dB gain,±1dB gain flatness,1.1dB noise figure,1dB gain compression point output power greater than9dBm.