不同调制频率下半导体载流子输运特性对时域曲线的影响研究

Study on the Influence of the Carrier Transport Characteristics on the Time Domain Curves in Different Modulation Frequencies

在工业半导体制造业中,伴随微电子器件尺寸不断缩小及集成程度的提高,对制作电子器件的半导体材料性质的检测是不可或缺的。因此文中提出在不同调制频率下对半导体载流子输运特性进行分析并研究它与时域曲线的关系。首先,利用自由载流子吸收检测技术,根据半导体原料中的自由载流子对光吸收的性质获取吸收系数,并通过该系数得到载流子浓度比例,运用调制激励光改变载流子浓度,依据载流子吸收光的特性再次调制探测光明确载流子输运参数;其次,运用调制载流子对光的吸收作用获取的输入参数,通过仿真实验利用输入参数中的载流子寿命、扩散系数和表面复合速度等因素,在不同频率下分析载流子输运特性与时域曲线的关系。实验证明,利用该技术能够较好地分析载流子输运特性对时域曲线的影响。

In the semiconductor manufacturing industry,with the shrinking of the feature size of themicroelectronic devices,it is necessary to detect and monitor the characteristics of semiconductormaterials.In this paper,the carrier transport characteristics in different modulation frequencies areanalyzed,and the relationship between them and the time domain curves is studied.First of all,the useof free carrier absorption detection technology,according to the characteristics of the light absorption offree carriers in a semiconductor material for absorption coefficient and carrier concentration ratio throughthe system,using the modulated optical modulation of its own carrier concentration,based on the carriermodulation detection light absorption again to determine the carrier transport parameters;secondly,theinput parameters using absorption to obtain the optical carrier modulation,through the simulationexperiment using the carrier lifetime,the input parameters of the diffusion coefficient and the surfacerecombination velocity and other factors,analysis of the relationship between the carrier transportcharacteristics and time domain curve under different frequency.The experimental results show that thistechnique can be used to analyze the influence of carrier transport characteristics on time domain curves.