摘要
Dickson电荷泵是最常用的产生芯片内部高压的方法。在嵌入式或者单独的非易失性存储器中,经常利用多个电荷泵来产生正的高压和负的高压。利用高压Deep N-Well的NMOS设计了可以切换极性的电荷泵,可以根据需要产生正的高压或者负的高压。这种设计的优点在于节省面积。
The most common approach used in the generation of on-chip high voltages are based on Dickson charge pump.In embedded and stand-alone designs of non-volatile memories,multiple charge pumps are utilized to generate both positive and negative voltages.The authors present a switchable charge pump design that utilizes high voltage deep N-WELL transistors to generate positive or negative high voltage based on the required mode of operation.Such design saves silicon area.
作者
张亦锋
马亮
ZHANG Yifeng;MA Liang(Shanghai Boyu Semiconductor Technology Co., Ltd, Shanghai 201203, China;Zhuhai Boya Technology Co., Ltd, Guangdong 519000, China)
出处
《集成电路应用》
2017年第8期36-40,共5页
Application of IC
基金
上海市软件和集成电路产业发展专项基金(2015.150204)