CMOS APS光电器件单粒子效应脉冲激光模拟实验研究

AN INVESTIGATION ON SINGLE EVENT EFFECTS OF CMOS APS IMAGE SENSOR WITH PULSE LASER

CMOS APS光电器件因低功耗、小体积的特点已成为遥感卫星成像的重要发展方向。随着半导体技术的不断进步,其单粒子效应已经成为一个影响可靠性的重要因素。针对CMOS APS光电器件,利用实验室脉冲激光模拟单粒子效应设备模拟了重离子在APS光电器件中引起的辐射损伤,分析了CMOS APS光电器件内部不同功能单元对单粒子效应的敏感性,获得了单粒子效应敏感参数。结果表明,CMOS APS光电器件在空间辐射环境中会诱发单粒子翻转和单粒子锁定。研究结果为进一步分析CMOS APS光电器件的抗辐射加固设计提供了理论支持。

With less energy consumption,small volume and less weight,CMOS APS is already a major development direction of imaging for remote sensing satellites.During the satellites flying on orbit,electron devices are exposed in space radiation,and degraded by space charged particles.Along with the improvement of semiconductor technology,sensibility of single event effect is more obvious,and is a key factor of reliability.Based on equipment on simulation of single event effect with pulse laser,radiation damage of CMOS APS irradiated by heavy ions is discussed.And sensibility of CMOS APS’s different functional unit for single event effect is also analysed,obtaining sensitive parameter of single event effect.The result could be used for the design of radiation hardening for CMOS APS image sensor.