基底旋转速度对射频溅射法制备Al掺杂ZnO薄膜结构和性能的影响（英文）

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

采用射频溅射法于室温在玻璃基底上制备了铝掺杂ZnO(AZO)薄膜,研究了基底旋转速度(ωS)对薄膜形态、结构、光学和电学性质的影响。扫描电子显微镜横向图片显示,通过基底旋转能够产生致密的柱状结构。原子力显微镜图像表明,基底旋转状态下形成的样品其表面颗粒比基体静止状态下的颗粒小且致密,从而导致细小的晶粒尺寸。XRD结果表明,所有薄膜均为六方纤锌矿结构,c轴择优取向且分布有拉应力。紫外可见光区平均透光率在90%以上。当ωS=0 r/min时,电阻率处于最低值(8.5×10^(-3)?·cm),载流子浓度为1.8×10^(20)cm^(-3),霍尔迁移率为4.19 cm^2/(V·s)。对于其他样品,基底旋转会引起载流子浓度和霍尔迁移率的变化,从而导致电阻率增加。结果表明:基底旋转速度对AZO薄膜的形貌、结构、光学和电学性能存在较大影响。

Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.