强电磁脉冲对微波场效应管影响的仿真研究

Simulation Research of Strong Electromagnetic Pulse Impact on Metal Epitaxial-Semiconductor Field Transistor

微波场效应管(MESFET)构成的低噪声放大器电路常用于射频前端,是常见的射频模拟电路。该电路在强电磁脉冲作用下易烧毁,从而导致设备失效。使用半导体器件-电路联合仿真器对强电磁脉冲作用下的微波场效应管烧毁过程进行仿真,对失效机理开展研究,为进行强电磁脉冲防护提供依据。研究结果表明:强电磁脉冲达到一定的阙值会导致MESFET烧毁,该阙值与强电磁脉冲的上升时间有关,根据仿真结果可进行强电磁脉冲的屏蔽防护。

As a common RF analog circuit,low noise amplifier circuit which consists of MESFET is often used in front of a RFequipment,which is easy to burn lead to equipment failure under the impact of strong electromagnetic pulse.In this article,we use aemluator which combines semiconductor device and circuit to simulate the burning process of MESFET under the impacte of strongelectromagnetic pulse,study on failure mechanism,and provides a basis for strong electromagnetic pulse protection.The results showthat the strong electromagnetic pulse reaches a certain threshold and causes the MESFET to burn.The threshold is related to the risetime of the strong electromagnetic pulse.According to the simulation results,the shielding of the strong electromagnetic pulse can becarried out.