高功率MPCVD中氧气对金刚石膜生长的影响研究

THE INFLUENCE OF O_2 ON GROWTH OF DIAMOND FILMS BY HIGH POWER MPCVD METHOD

采用自制10kW微波等离子体装置,在CH_4/H_2气源中添加不同浓度O_2,探讨了O_2对金刚石薄膜生长的影响。利用扫描电子显微镜、激光拉曼光谱仪以及X射线衍射仪对金刚石薄膜的表面形貌、结晶质量以及晶粒取向进行了表征。结果表明,O_2浓度在0~0.9%范围内,所制备的金刚石薄膜品质随着O_2浓度的提升逐渐升高,当O_2浓度达到0.9%时,所制备的金刚石薄膜品质最好,其杂质含量低,金刚石半高宽值达到6.2cm^(-1),且金刚石晶粒基本表现为(111)面生长,具有较高晶面取向。但当O_2浓度超过到1.0%后,金刚石的生长会遭到破坏。

We have a study about the effects of O2on the growth of diamond films,and the diamond films were deposited by microwave plasma chemistry vapor deposition method using CH4/H2gas mixture with different concentrations of O2addition.The surface morphology,quality and crystal structure of diamond films were systematically characterized by scanning electron microscopy(SEM),Raman spectroscopy and X-ray diffraction(XRD).When the O2concentration is in the range of0~0.9%,the results show that with the increase of O2addition,the quality of the diamond films get much better.When the concentration of O2is increased to0.9%,the quality of the diamond is the best,the impurity content is low,the diamond FWHM is6.2cm-1and the diamond has high crystal orientation in(111)plane.But when the concentration of O2is increased to1.0%,the growth of diamond grain will be destroyed,even complete diamond films can't be deposited.