摘要
用无压浸渗法制备了高导热的SiC/Al电子封装材料。采用光学显微镜、X射线衍射仪、扫描电镜和激光热导仪对复合材料导热率、晶体结构和微观形貌进行了分析,研究了SiC颗粒大小、形状、体积分数、基体中Mg的含量和预氧化等参数对SiC/Al复合材料的导热率的影响。结果表明,选择适当的原料参数和工艺参数可制得导热率高达172.27 W/(m·k)的SiC/Al复合材料,满足电子封装材料的要求。
High thermal conductivity SiC/A1composites were prepared by presureless infiltration method,the crystal phases,micrographs and thermal conductivity were analysed by XRD,SEM and laser thermalconductance instrument.The effect of SiC particle size,shape,volume fraction,Mg content and the pre-oxidation on thermal conductivity of samples were studied.The results show:the thermal conductivity of samples can be as high as172.27W/(m.k)and meet the eletronic packing materials requirements with suitable raw materials and process parameters.
作者
王涛
WANG Tao(College of Materials Science and Engineering, Xian University of Science and Technology, Xian 710054, China)
出处
《人工晶体学报》
CSCD
北大核心
2017年第10期2062-2066,共5页
Journal of Synthetic Crystals
关键词
SIC/AL复合材料
无压浸渗
导热率
电子封装
SiC/A1 composite
presureless infiltration method
thermal conductivity
eletronic packaging
