多晶硅的反应离子刻蚀(RIE)制绒绒面研究

Research on Surface Texture of Multicrystalline Silicon by Reactive Ion Etching

实验基于反应离子刻蚀(Reaction Ion Eatching RIE)技术进行的多晶硅片纳米绒面制备,这种结构的绒面可明显降低晶体硅电池反射率,提高电池短路电流。实验具体指将多晶硅片在同一条件混酸溶液中腐蚀去除表面损伤,然后利用RIE制绒技术进行不同尺寸纳米绒面制备,根据绒面变化分别调整工艺进行清洗及电池制备,发现绒面小到一定程度时RIE制绒过程造成的损伤不易清洗去除且抗反射Si Nx膜沉积困难。所以多晶硅片RIE制绒不可单纯的追求小绒面和低反射率,实验证明纳米绒面凹坑尺寸最小应控制在240~360 nm才能更稳定地匹配清洗、沉积抗反射膜等工艺从而制备出高光电转换效率的多晶硅电池。

The experiment was based on(Reaction Ion Eatching)RIE technology to prepare polycrystalline silicon wafer with nano scale,the surface texture structure can obviously reduce the reflectivity and improve the short-circuit current of crystalline silicon cells.The experiment specifically refers to the etching of polysilicon wafers in the same mixed acid solution to remove surface damage,and used RIE technology to make texture with different size,then we adjusted the cleaning process and cleaned the wafer by according to the different texture to prepare cells.Finally we find that if the texture structure is very minimum,the damage on wafer can not be stripped completely and the antireflective SiNx is hard to deposition.The experiment results show that when prepared cells by RIE technology,the minimum texture structure and lowest reflectivity is not good,but the texture size of Nano pit should be controlled at240nm to360nm to match the cleaning and deposition of antireflective coatings more effectively,to be better made polycrystalline cells of high conversion efficiency.