11～12 GHz单电源GaN微波功率放大模块研制

The Development of an 11～12 GHz GaN Microwave Power Amplifier Module of Single Power Supply

报告了采用凹槽栅场板结构的Ga N微波功率HEMT管芯,优化了场板结构和工艺参数,制作了0.8 mm和2.4 mm栅宽的管芯。采用该管芯制作了两级放大的功率模块,该模块匹配电路制作在380μm厚的Al_2O_3陶瓷基片上,匹配电容制作在180μm厚的高介电常数的陶瓷基片上。电感采用25μm直径的金丝拟合,电路结构采用单电源结构。该模块在11～12 GHz、28 V工作电压下,饱和输出功率达到了8 W,功率增益为12 d B,功率附加效率(PAE)为30%,实现了低电流、高效、高可靠性、可实用的功率模块。该模块是迄今为止采用单电源结构频率最高的Ga N功率模块。

An11~12GHz power amplifier module of single power supply has been developed.This module is based on0.8mm and2.4mm GaN HEMTs with optimized field-plate structure and process.All the internal matching circuits are fabricated on Al2O3ceramic substrate of380um thickness,and the matching capacitors are fabricated on high permittivity ceramic of180um thickness.The matching inductors are realized of gold bonding wires of25umdiameter.During the frequency band of11~12GHz and under8V supply voltage,the module can realize8W output power,12dB power gain and30%power added efficiency(PAE)simultaneously.The measurement results indicated that a lowoperation current,high efficiency,high reliability and applicable power amplifier module has been realized.As a power module with single power supply,it operates at the highest frequencyband state of art.