铜箔在石墨烯表面沉积的多弧离子电镀工艺研究

Deposition Process Investigation of Copper Growing on Graphene by Multi-arc Ion Plating Process

一项新的铜箔在石墨烯薄膜上的沉积工艺已经被研究出来。和以往通过CVD法在铜箔上生长石墨烯的研究相比较,该研究应用了一种无接触式电子加工工艺的多弧离子电镀法。在实验中,石墨烯表面成功地形成了一层薄的铜膜,表明这种铜箔沉积工艺的实用性。此外,通过滚压可显著加快工艺过程,实现大量生产。

A new process of depositing copper on graphene's wafer is tested in this research.Comparing to previous researches on growing graphene in copper foil using the CVD,a new non-contact electrical manufacturing process called multi-arc ion plating is adopted in the research.A thin layer of copper is successfully deposited on the graphene.The results show the efficiency of the process of depositing copper.Furthermore,if the roll is used,it would significantly fasten the process so as to make it mass producible.