二甲基二氯化锡前驱体CVD制备SnO2∶F薄膜及其性能研究

Performance of F-doped SnO_2 Thin Film Prepared from Dimethyltin Dichloride Precursor by Chemical Vapor Deposition

采用二甲基二氯化锡(DMTC)为新前驱体,通过常压CVD法在硼硅玻璃基板上制备SnO_2∶F透明导电薄膜,研究了DMTC、TFA和H_2O的含量对薄膜结构及光电性能的影响,研究表明当F/Sn物质的量比为1∶1、H2O/Sn物质的量比为3∶2时,制备出可见光透过率84.17%、方块电阻9.2Ω/□且结晶性能良好的多晶SnO_2薄膜。通过与单丁基三氯化锡(MBTC)为前驱体所制备薄膜的性能进行比较,结果表明,两种前驱体所制备薄膜均具有四方金红石结构,利用DMTC不仅可以制备出与MBTC性能相近的薄膜,同时薄膜表面更加均匀。

FTO(SnO2∶F)films were prepared via atmospheric pressure chemical vapor deposition on the borosilicate glass substrate with a new precursor dimethyltin dichloride(DMTC).The influences of contents of DMTC,TFA and water on the structure and photoelectric properties of films were studied respectively.Results showed that when the molar ratio of F/Sn,H2O/Sn was1∶1and3∶2respectively,the as prepared film had a high visible light transmittance of84.17%and a sheet resistance of9.2Ω/□with a high crystallinity of polycrystalline SnO2thin films.Comparative analyses of thin films prepared from different precursors,i.e.dimethyltin dichloride and monobutyltin trichloride(MBTC),indicated that both of the produced films had tetragonal rutile structure and similar performance,but film deposited using DMTC precursor was more uniform.