摘要
半绝缘半导体包含了第二代和第三代半导体,它们在微波、光电子、新能源及微电子领域有着广泛的应用,电阻率一般在10~5Ω·cm^10^(12)Ω·cm之间。要研究此类新材料的电阻率分布状况已无法用现有的探针法、霍尔法、I-V法实现。因此,参照德国din标准及我国电子行业标准,用TDCM法研发了"半绝缘半导体电阻率分布测绘仪",设计并研制了电容性探头、高精度三维测试台,开发了以拟合曲线为基础的数据处理及绘图软件,实现了对直径6英寸以下SiC、GaAs、CdZnTe等晶片的无接触电阻率扫描测绘,给出了彩色分布图。
Semi-insulating semiconductors contain the second and the third generations of semiconductors.They are widely used in microwave,optoelectronics,new energy and microelectronics.Their resistivity is generally lying between105Ω?cm^1012Ω?cm.It is impossible to survey the resistivity distribution of these new type materials with the existing probe method,Hall method and I-V method.Referring to the DIN standard of Germany and electronics industry standards of China,we developed the mapping instrument of resistivity distribution for semi-insulating semiconductors with the TDCM method,and designed and developed a capacitive probe,high precision3D test bench,and the data processing and drawing software as well.So the contactless scanning and mapping of resistivity of6inch SiC and GaAs chips are realized.
作者
王昕
李俊生
田蕾
叶灿明
Wang Xin;Li Junsheng;Tian Lei;Ye Canming(Guangzhou Kunde Technology Co., LTD., Guangzhou, 510650, China)
出处
《仪器仪表用户》
2018年第2期15-17,91,共4页
Instrumentation
基金
2015年广州市天河区科技攻关项目(201507YG061)
关键词
半绝缘半导体
电阻率
无接触测量
semi-insulating semiconductor
resistivity
contactless measurement