石墨烯传感器的研制及对ATP的检测研究

Fabrication of Graphene Sensor and Its Application in ATP Detection

石墨烯由于其与众不同的结构和物理性质从而引起人们的高度关注.化学气相沉积(CVD)方法被认为是制备大面积石墨烯的最成功的方法.然而传统石墨烯方法通常只能在金属基底上生长石墨烯,因此只能通过转移到绝缘基底上才能用于石墨烯器件的制备.转移过程会对石墨烯造成褶皱和损伤,这些严重降低了石墨烯的电学特性.而高温CVD方法,在无金属催化剂的条件下,在蓝宝石基底上直接生长了石墨烯薄膜.将该蓝宝石为基底的石墨烯直接制成了ATP传感器,该传感器对ATP浓度在1mol/L^10-6 mol/L呈现出良好的线性响应.

Graphene has been attracting much attention due to its different structure and physics proper-ties.Chemical vapor deposition(CVD)method has been demonstrated the most successful method for fab-ricating large area graphene.However,the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication.The transfer process creates wrinkles,cracks,or tears on the graphene,which severely degrade electrical properties of graphene.Here,we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts.The sapphire-based graphene was make into an ATP sensor and shows a good linear responses to the concentrations from1mol/L to10-6mol/L.