65 nm体硅工艺NMOS中单粒子多瞬态效应的研究

Research on Single Event Multiple Transient Effect in 65 nm Bulk NMOS

针对NMOS场效应晶体管由重离子辐射诱导发生的单粒子多瞬态现象,参考65 nm体硅CMOS的单粒子瞬态效应的试验数据,采用TCAD仿真手段,搭建了65 nm体硅NMOS晶体管的TCAD模型,并进一步对无加固结构、保护环结构、保护漏结构以及保护环加保护漏结构的抗单粒子瞬态效应的机理和能力进行仿真分析。结果表明,NMOS器件的源结和保护环结构的抗单粒子多瞬态效应的效果更加明显。

Aiming to research the single event multiple transient due to single event charge sharing inducing by heavy-ion radiation in NMOSFET(Negative Channel Material-Oxide-Silicon Field Effect Transistor),a65nm bulk NMOS model based on TCAD(Technology Computer-Aided Design)simulation has been built,where a SPICE model and a set of date about SET pulse width in inverter chain based on65nm bulk CMOS(Complementary Metal-Oxide-Semiconductor Transistor)processes are refer to.Due to charge sharing induced via injection of heavy ion,single event multiple transient was observed in the TCAD simulation.During the process of charge sharing,Observation on electrostatic potential distribution inside the device and current on the port of device reveals that source junction of the NMOS and guard ring structure play significant roles on recovery of single event multiple transient.