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冲击电流驱动下半导体激光器的快速响应研究

Fast response of semiconductor laser driven by impulse current
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摘要 基于半导体激光器的单模速率方程,采用典型参数对其进行建模仿真,仿真结果表明:半导体激光器在初期的光子受激辐射速率随着注入电流的增大而增加,上升时间随着注入电流的增大而减少。但对于固定功率限制范围的半导体激光器,不能通过直接增大注入电流来减少上升时间,考虑到半导体激光器的发热问题,提出了一种在正常脉冲发光电流前端加入冲击电流来减少半导体激光器发射脉冲上升时间的方法,保证了半导体激光器的稳定输出。通过仿真对该方法进行验证,并对型号为PLTB450B半导体激光器进行了测试。仿真结果与测试结果均表明:通过加入冲击电流的方法,可以大大减少固定功率的半导体激光器发射脉冲的上升时间。 Based on single-mode rate equations of semiconductor laser,the typical parameters are used to model and simulate the semiconductor laser.The simulation results show that the initial photon stimulated emission rate of the semiconductor laser increases with the increase of the injection current,the rise time reduces with the increase of in-jection current.But for a fixed power limited semiconductor laser,the rise time can^be reduced by directly increasing the injection current.Considering the heating problem of semiconductor laser,a method of adding an impulse current in the front of the normal luminous pulse current to reduce the rise time of the transmitted pulse of the semiconductor laser is proposed,which ensures the stable output of the semiconductor laser.The method is verified by simulation,and the PLTB450B semiconductor laser is tested.The simulation results and test results show that the rise time of the transmitted pulse of the fixed power semiconductor laser can be greatly reduced by adding impulse current.
作者 邓丽 张涛 许博 李亭亭 DENG Li;ZHANG Tao;XU Bo;LI Ting-ting(Manufacture Science and Engineering College, Sichuan University, Chengdu 610065 , China)
出处 《激光与红外》 CAS CSCD 北大核心 2018年第2期186-190,共5页 Laser & Infrared
关键词 半导体激光器 单模速率方程 受激辐射速率 上升时间 冲击电流 semiconductor laser single-mode rate equation stimulated emission rate rise time impulse current
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