基板偏压对溅镀AlCrNbSiTiV高熵合金氮化物薄膜性能的影响

Effect of substrate bias voltage on properties of nitrided AlCrNbSiTiV high-entropy alloy thin film by sputtering

用真空电弧熔炼法制备了AlCrNbSiTiV高熵合金,并将其作为靶材,利用直流反应式磁控溅镀法在T1200A金属陶瓷刀具或硅晶片上沉积了高熵合金氮化物薄膜。通过扫描电镜、能谱仪、X射线衍射仪和纳米压痕仪考察了基板偏压对薄膜形貌、元素含量、物相成分和性能的影响。所得氮化物薄膜均匀、致密,所有元素的原子分数与靶材相当。由于再溅射,沉积速率随着基板偏压增大而减小。薄膜的弹性恢复和显微硬度在基板偏压为0^-100 V时随着偏压增大而提高,进一步增大偏压反而减小。相比未溅镀薄膜的刀具,用溅镀了AlCrNbSiTiV氮化物薄膜的刀具干切削S45C中碳钢圆柱工件,工件表面的粗糙度和刀具的侧面磨损显著降低。-100 V偏压溅镀的刀具的切削性能最佳。

A high-entropy alloy AlCrNbSiTiV was prepared by vacuum electric arc melting,and then used as a target to deposit nitrided high-entropy alloy thin films on T1200A cermet cutter or silicon wafer by direct-current reactive magnetron sputtering.The effect of substrate bias voltage on morphology,elemental composition,phase composition and properties of the thin film was studied by scanning electron microscope,energy-dispersive spectrometer,X-ray diffractometer and nanoindenter.The nitride thin films obtained are homogeneous and compact,and the atom fractions of all elements in them are comparable to those in the target.The deposition rate is decreased with the increasing of substrate bias voltage due to re-sputtering effect.The elastic recovery and microhardness of the nitride thin film are increased with the increasing of substrate bias voltage from0V to-100V,and then decreased with further increasing of substrate bias voltage.The surface roughness of a cylindrical S45C medium-carbon steel workpiece cut in dry condition by using a cermet cutter with sputtered AlCrNbSiTiV nitride thin film and the flank wear of the cutter are reduced markedly as compared with the one without sputtered thin film.The cutter sputtered at a bias voltage of-100V has the optimal cutting performance.