摘要
近年来,量子卫星通信、主动成像等先进技术的应用取得了较大的进展,InGaAs/InP雪崩光电探测器作为信息接收端的核心器件起到了至关重要的作用。本文系统介绍了InGaAs/InP雪崩光电探测器的工作原理,分析了器件结构设计对暗电流特性的影响,对盖格模式下多种单光子探测电路进行了综述,同时对新型金属-绝缘体-金属结构设计的研究进展进行了介绍和展望。
In recent years,quantum satellite communication and active imaging,where InGaAs/InP infrared avalanche photodetectors play a key role in single-photon detection,have progressed considerably.This review provides a detailed introduction to the basic principle of InGaAs/InP infrared avalanche photodetectors.The impact of the device structure characteristics on the dark current avalanche mechanism is summarized.Different circuits related to single-photon detection technology,running in Geiger mode,are presented.Several novel metal-insulator-metal structures are introduced for enhancing the quantum efficiency of InGaAs/InP infrared avalanche photodetectors,and their prospects are discussed.
作者
胡伟达
李庆
温洁
王文娟
陈效双
陆卫
HU Weida;LI Qing;WEN Jie;WANG Wenjuan;CHEN Xiaoshuang;LU Wei(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics of CAS,Shanghai 200083,China)
出处
《红外技术》
CSCD
北大核心
2018年第3期201-208,共8页
Infrared Technology
基金
国家杰出青年基金项目(61725505)。
