0.8μm高压BCD电路漏电失效改善

Leakage Failure Improvement of 0.8 μm High Voltage BCD Circuits

0.8μm高压BCD(Bipolar-CMOS-DMOS)电路存在漏电失效,其失效原因是IMD(InterMetal Dielectric)平坦化不良,造成金属2残留短路。通过SOG(spin-on-glass)二次平坦化工艺,大幅改善了IMD的平坦化效果,将平坦化因子由0.35提升到0.90,杜绝了金属2残留,较好地解决了漏电问题,提高了电路成品率。

The leakage failure existing in0.8um high voltage Bipolar-CMOS-DMOS(BCD)circuits iscaused by the metal2residual during the poor planarization of inter-metal dielectric(IMD)and the resultedcircuit-short of different metal2lines.In the paper,by developing the twice planarization technology of spin-on-glass(SOG),the planarization effect of IMD is significantly improved with an increasingdegree of planarization from0.35to0.90and an elimination of the metal2residual.As a result,the leakagefailureproblem is successfullysolved and the yield of circuits is improved.