Ge基Ⅲ-Ⅴ族半导体材料外延研究

Study on the Epitaxy of Ge-Based Ⅲ-Ⅴ Semiconductor Materials

Ge基Ⅲ-Ⅴ族半导体材料(GaAs/Ge,GaInP/Ge)在外延过程中存在很多问题,主要是反向畴和异质界面间原子的互扩散。在As或者P气氛中对Ge衬底表面进行高温预处理,可以有效避免反向畴形成。采用较低的生长温度和生长速率,可以有效抑制异质界面间原子的互扩散。

There are many problems in the process of epitaxial Ge-based III-V semiconductor materials(GaAs/Ge,GaInP/Ge),which are mainly antiphase domains and interdiffusion between the heterogeneous interfaces.It is proposed that the high temperature pretreatment of the Ge substrate in As or P atmosphere can effectively avoid the formation of antiphase domains.The interdiffusion of atoms between heterogeneous interfaces can be effectively suppressed by using lower growth temperature and growth rate.