碲锌镉晶体生长全局热传递模拟模型准确度研究

Study on accuracy of global heat transfer simulation model for CdZnTe crystal growth

在碲锌镉晶体生长技术开发方面,数值模拟软件发挥着越来越重要的作用。以全局热传递模型为基础进行晶体生长模拟能够极大的提高模拟结果的实用性,缩短晶体生长设备及生长工艺的开发周期。但其前提是采用的全局热传递模型的准确度较高。因此,本文主要研究了几何模型、物性参数、边界控温条件等对模型准确度的影响,并根据模型计算值与炉体中心测温比较结果,修正了上述模型各参数,获得了在多种温度设定条件下,计算结果都能与实际过程很好的吻合的全局热传递模型。采用修正后的模型应用于碲锌镉晶体生长过程模拟,最终晶体生长模拟结果的温度与实际监测温度差距在2℃以内。

Numerical simulation has been more and more important with the development of CdZnTe crystal growth technology.The effects of the geometry m odel,the material properties and the border temperature control conditions on the accuracy of global heat transfer model were analyzed.According to comparative results of model calculation and the measured temperature,those parameters were modified.Then,two temperatures settings were tested based on the modified global heat transfer model.The numerical results are consistent with the real ones.At last,the modified global model was applied to CdZnTe crystal growth simulation.The difference between the numerical temperature and the monitored temperature is less than2℃.