单颗磨粒磨削碳化硅陶瓷磨削力与比能研究

Grinding Force and Specific Grinding Energy in Process of Grinding SiC with Single Grit

为探索磨削速度和单颗磨粒最大未变形切厚对碳化硅陶瓷高速磨削材料去除过程的影响规律,进行了切向进给单颗磨粒高速磨削试验,研究了磨削力、磨削比能与磨削速度以及单颗磨粒切厚的关系。研究结果表明,单颗磨粒切厚为0.03和1μm时,磨削力和磨削比能均随着速度的增加而减小,而当切厚为0.3μm时,磨削力和磨削比能随着磨削速度先增加后减小,磨削速度80m/s为其转折点。磨削力随着单颗磨粒切厚的增大整体上呈上升趋势,但是当切厚小于某一临界值时,磨削力变化并不明显,磨削比能却急剧降低,而且磨削速度提高,该临界值变大。因此,磨削速度的提高有利于降低磨削力和磨削比能,适当增加单颗磨粒未变形切厚并不会恶化加工质量。

To explore the influence of grinding speed and maximum undeformed chip thickness(M-UCT)on material removal mechanisms in high-speed grinding process,a single grit grinding experiment is carried out on silicon carbide(SiC)ceramics with tangential infeed grinding method.The grinding force and the specific grinding energy are analyzed.The results show that the grinding force and the specific grinding energy tend to decrease with the increase of grinding speed at M-UCT of0.03and1μm.However,when M-UCT is0.3μm,the grinding force and the specific grinding energy firstly increase and then decrease as the grinding speed rises,and80m/s is the turning point.The grinding force shows the periodic growth with the gradually increasing M-UCT.When the M-UCT is less than a critical value,the grinding force varies slowly.Nevertheless,the specific grinding energy declines quickly.The critical M-UCT value increases with the increase of grinding speed.High speed grinding can significantly reduce the grinding force and the specific grinding energy,and appropriate increment of M-UCT can not worsen the grinding quality.