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基于AlGaN/GaN场效应晶体管的太赫兹焦平面成像传感器 被引量:10

Terahertz focal plane imaging array sensor based on AlGaN/GaN field effect transistors
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摘要 太赫兹波成像技术在人体安检、医学成像、无损检测等领域具有广泛的应用前景。文中面向高速、高灵敏度和便携式太赫兹成像应用需求,设计实现了一种基于AlGaN/GaN高电子迁移率晶体管自混频检测机制的太赫兹焦平面成像传感器。该焦平面成像传感器由探测器阵列芯片和CMOS读出电路通过倒装互连实现,阵列规模达到32×32。探测器阵列中具有对管差分功能的像元设计通过提高探测器的电压响应度和抑制共模电压噪声,提高了焦平面成像的灵敏度。焦平面成像传感器的输出模拟信号通过片外的模数转换(ADC)芯片转化为数字信号,由现场可编程门阵列(FPGA)采集后通过Camera Link图像数据与通信接口发送到计算机。利用该焦平面成像传感器,演示实现了太赫兹光斑、太赫兹干涉环和太赫兹光照下的旋转塑料叶片的视频成像,帧频达到30 Hz。 Terahertz technologies are believed to find various applications such as security screening,medical imaging,nondestructive inspection etc.For high speed,high sensitivity,and portable terahertz imaging applications,Terahertz Focal Plane Arrays(THz-FPAs)were designed and demonstrated based on self-mixing mechanism in AlGaN/GaN high-electron-mobility transistors(HEMT).The THz-FPAs with an array size of 32×32 were realized by flip-chip bonding a detector array and a readout integrated circuit(ROIC)based on silicon CMOS technology.Each pixel detector consisted of two HEMTs which were configured in a differential output scheme so as to enhance the voltage responsivity,reject the common-mode voltage noise,and increase the sensitivity.The differential detector signals were amplified in the ROIC and converted to digital data by an Analog-to-Digital Converter(ADC)in a printed-circuit board(PCB)which also hosted a Field-Programmable Gate Array(FPGA)for data acquisition and conversion.The data converted into a video stream was sent to a personal computer through the Camera Link interface.The focal plane array was used to demonstrate imaging of terahertz beam spot,terahertz interference ring pattern,and a rotating plastic blade under terahertz illumination all with a frame rate up to 30 Hz.
作者 罗木昌 孙建东 张志鹏 李想 申志辉 王颖 陈红兵 董绪丰 张金峰 陈扬 周建勇 秦华 Luo Muchang;Sun Jiandong;Zhang Zhipeng;Li Xiang;Shen Zhihui;Wang Ying;Chen Hongbing;Dong Xufeng;Zhang Jinfeng;Chen Yang;Zhou Jianyong;Qin Hua(Chongqing Institute of Optoelectronics Technology,Chongqing 400060,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano Technology and Nano Bionics,University of Science and Technology of China,Suzhou 215123,China)
出处 《红外与激光工程》 EI CSCD 北大核心 2018年第3期234-239,共6页 Infrared and Laser Engineering
基金 国家自然科学基金(61401456 61271157 61401297 61611530708) 国家重点研发计划(2016YFF0100501)
关键词 太赫兹自混频探测器 高电子迁移率晶体管 CMOS读出电路 焦平面成像 terahertz self-mixing detector high-electron-mobility transistor CMOS readout integrated circuit focal plane array
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  • 1申金娥,荣健,刘文鑫.太赫兹技术在通信方面的研究进展[J].红外与激光工程,2006,35(z3):342-347. 被引量:24
  • 2张兴宁,陈稷,周泽魁.太赫兹时域光谱技术[J].激光与光电子学进展,2005,42(7):35-38. 被引量:38
  • 3程兆华,祝大军,刘盛纲.THZ探测技术研究进展[J].电子测量与仪器学报,2005,19(4):1-5. 被引量:7
  • 4Steven Cherry. Edholm's law of bandwidth[J]. IEEE Spectr, 2004, 41(50): 58-60.
  • 5Hirata A, Kosugi T, Meisl N, et al. High-directivity photonic emitter using photodiode module integrated with HEMT amplifier for 10-Gbit/s wireless link [J]. IEEE Trans Microwave Theory Tech, 2004, 52(8): 1843-1850.
  • 6Hirata A, Takahashi H, Yamaguchi R, et al. Transmission characteristics of 120-GHz-band wireless link using radio- on-fiber technologies[J]. J Lightwave Technol, 2008, 26(15): 2338-2344.
  • 7Takahashi H, Kosugi T, Hirata A, et al. 10-Gbit/s quadrature phase-shift-keying modulator and demodulator for 120-GHz-band wireless links [J]. IEEE Trans Microwave Theory Tech, 2010, 58(12): 4072-4078.
  • 8Radoslaw Piesiewicz, Thomas Kleine-Ostmann, Norman Krumbholz, et al. Short-range ultra-broadband terahertz communications: concepts and persperctives [J]. IEEE Antennas and Propagation Magazine, 2007, 49(6): 24-39.
  • 9Thomas Kiirner, Martin Jacob, Radoslaw Piesiewicz, et al. An integrated simulation environment for the investigation of future THz communication systems: extended version [J]. Simulation, 2008, 84(2/3): 123-130.
  • 10Kleine-Ostmann T, Pierz K, Hein G, et al. Audio signal transmission over THz communication channel using semiconductor modulator [J]. Electron Lett, 2004, 40(124): 124-126.

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