旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用

Fabrication of Zirconia Dielectric Layer by Spin Coating and Its Application in Thin Film Transistor

采用旋涂法制备了氧化锆介质层薄膜,重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆,另一方面促使氧化锆薄膜结晶。此外,转速较高时,其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时,制备的绝缘层厚度具有良好的厚度均匀性,粗糙度为0.7 nm,漏电流为3.13×10-5A/cm2(电场强度1 MV/cm)。最终,利用Zr O2薄膜作为栅极绝缘层,在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管(IGZO-TFT),其迁移率为6.5 cm2/(V·s),开关比为2×104。

The zirconia dielectric film was prepared by spin coating,and the effect of spin coating speed and annealing temperature on the properties of the film was discussed.The post-high temperature annealing,on the one hand,can cause the zirconia hydrate to dehydrate to form zirconia,and on the other hand,crystallize the zirconia film.In addition,when the speed is high enough,the change has no significant effect on the thickness and roughness of the film.When the spin coating speed is 5 000 r/min and the annealing temperature is 300℃,the prepared insulating layer has good thickness uniformity,with a roughness of 0.7 nm,and the leakage current density is 3.13×10-5 A/cm 2 at electric fields of 1 MV/cm.Thin film transistor(IGZO-TFT)was prepared on a glass substrate using ZrO 2 thin film as gate insulating layer.The mobility is 6.5 cm 2/(V·s)and the on-to-off current ratio is 2×10 4.