高气压对MPCVD沉积金刚石薄膜的影响

INFLUENCE OF HIGH PRESSUREON MPCVD DEPOSITION OF DIAMOND FILMS

本研究在10 kW微波等离子体CVD装置中进行,以仿真模拟为辅助理论依据研究了在一定的高功率环境下,气压对金刚石薄膜沉积质量的影响。利用SEM表征对金刚石表面形貌变化进行分析,利用Raman表征结果分析了不同气压环境下金刚石薄膜的结晶质量及半高宽的变化情况。研究结果表明,气压对电子密度影响很大,进而影响金刚石沉积薄膜的表面形貌。在5 kW微波功率下,17 kPa为最优沉积气压,沉积形貌相对最好,半高宽最小。当气压低于17 kPa时,结晶质量随气压增大而增大;当超过17 kPa时,结晶质量不增反降。

The effects of pressure on the deposition of diamond films is based on simulation and simulation were systematically investigated in a 10 kW home-made MPCVD apparat in a certain high-power environment.The surface morphology of the diamond was analyzed by SEM and the crystal quality and FWHM of the diamond films were analyzed by Raman characterization.The results show that pressure has a great effect on electron density,which in turn affects the surface morphology of diamond-deposited films.Under the microwave power of 5 kW,17 kPa is the optimum deposition pressure,the deposition morphology is the best,and the half width is the minimum.When the pressure is lower than 17 kPa,the quality of the crystals increases with the increase of the pressure.When the pressure exceeds 17 kPa,the quality of the crystals does not increase or decrease.