高功率CMOS太赫兹压控振荡器设计

High Power CMOS Terahertz Oscillator Design

在太赫兹频段,受有源器件截止频率、击穿电压以及无源器件较低品质因素的限制,信号源很难实现高功率输出。基于CMOS工艺实现高功率太赫兹压控振荡器,首先运用有源状态分析MOSFET器件,并采用多层共面波导MCPW结构优化无源器件,提高其品质因数,实现了振荡器的基波频率接近有源器件的最高振荡频率;其次,采用Triple-push结构实现三次谐波输出,并利用功率合成技术提升了谐波输出功率,实现了同时具有高频率、高功率特性的CMOS太赫兹压控振荡器。基于GF 65nm CMOS工艺的仿真结果表明,振荡频率为291GHz时,输出功率可达-9.4dBm。

High power signal generation at terahertz is a major challenge due to the limited cut-off frequency and breakdown voltage of active device as well as the lower quality factor of passive components.To realize high power terahertz voltage-controlled oscillator by CMOS,this paper achieves fundamental oscillation frequencies close to the maximum oscillation frequency(f max)of the transistor by analyzing the active condition and optimizing the quality factor of the transistor through the structure of multilayer coplanar waveguide(MCPW),otherwise,three times the frequency output is realized by using Triple-push structure which improves the output power using the power synthesis technology,realizes the high frequency,high power terahertz CMOS voltage-controlled oscillator.At last,a 291 GHz oscillator in GF 65nm CMOS process with the output power of-9.4 dBm is realized.