电子束退火法制备Li-N共掺杂多晶ZnO薄膜

Preparation of Li-N Dual-doped Polycrystalline ZnO Films by Electron Beam Annealing

为研究电子束退火对Li-N共掺杂Zn O薄膜性能的影响,首先利用溶胶-凝胶旋涂法在p型Si(111)衬底上制备Li-N共掺杂的Zn O前驱膜,然后用电子束对前驱膜进行退火。退火时,电子束加速电压10 k V,退火时间5 min,聚焦束流123 m A,束流为0.7~1.9 m A,最后得到Li-N共掺杂的Zn O薄膜。XRD谱分析表明,当束流高于1.5 m A之后,薄膜为六方Zn O和立方Zn O的混合多晶薄膜,且有金属Zn生成,导致薄膜有较强的绿光发射。SEM图片分析显示,薄膜的晶粒尺寸随束流增加而增大,当束流高于1.5 m A后,晶粒尺寸变化不大,约为60 nm。光致发光(PL)谱和激光拉曼谱的分析结果证实Li、N元素已掺入Zn O晶格中,PL谱中观察到Li元素掺杂引起的紫光发射,拉曼散射光谱中观察到N替代O位的缺陷振动模式。

In order to study the performance of Li-N dual-doped ZnO thin film prepared by electron beam annealing technology,the Li-N dual-doped ZnO precursor films were prepared by sol-gel spinning method and annealed by electron beam.The accelerating voltage,focus beam current and annealing duration were fixed at 10 kV,123 mA and 5 min,respectively.The electron beam current was within the range from 0.7 mA to 1.9 mA.Finally,the Li-N dual-doped ZnO films were obtained.When the electron beam current is more than 1.5 mA,the result of X-ray diffraction shows that the samples are a compound polycrystalline films of hexagonal ZnO and cubic ZnO,and the metal Zn generates in the films which contributes to the green light emission.SEM pictures show that the grain size increases with the electron beam current.There is not much change in grain size when the electron beam current is more than 1.5 mA and it is about 60 nm.The analysis of photoluminescence(PL)and Raman spectra show that Li and N have doped in the ZnO lattice.The doped Li contributes to the purple light emission in the PL spectra and the vibration mode related to the doped N replacing O is observed in Raman scattering spectra.