掺杂富勒烯衍生物阻变存储器存储性质的调控研究

Bistable Memory Devices Based on Fullerenes Derivative Doped Resistive Memory Properties

以PS(聚苯乙烯)和PC_(61)BM([6.6]-苯基-C61-丁酸甲酯)为活性材料,通过加入导电性不同的缓冲层材料,优化了阻变存储器件的开关比。制备时分别以金纳米粒子(Au-NPs)、聚3,4-乙烯二氧噻吩/聚苯乙烯磺酸盐(PEDOT∶PSS)、聚乙烯吡咯烷酮(PVP)材料作为器件的缓冲层,得到了开关比可调、存储机制不同的电双稳态器件。测试结果发现缓冲层材料导电性是影响器件开关比的关键因素,当缓冲层材料从绝缘性材料PVP换为导电性良好的金纳米粒子,其开关比从10~2逐渐增大到10~5。另外对于不同结构的存储机制,通过电流电压拟合曲线和能带原理图分析,发现缓冲层材料的导电性质及能级匹配是影响器件存储机制的重要因素。

The memory devices based on composites of PS and PC 61 BM were investigated.By adjusting the buffer layer materials,we optimized the ON/OFF current radio of the device.With Au-NPs,PEDOT∶PSS,PVP as a buffer layer at the context layer of the active layer respectively,the adjustable ON/OFF current radio,different memory mechanism of electrical bistable device is obtained.The measurement results show that the buffer layer conductivity plays an important role in ON/OFF current radio.When the buffer layer material changed PVP to Au-NPs,the ON/OFF current radio increased gradually from 10 2 to 10 5.In addition to the memory mechanism of different structure,through the I-V fitting curve and energy band diagram analysis,it is found that the conductive properties and energy level of buffer material are important factors of affecting the memory mechanism.