期刊文献+

金属氧化物TFT阈值对LCD显示屏可靠性的影响 被引量:4

Effect of Threshold-voltage of Oxide-TFT on The Reliability of LCD Display
下载PDF
导出
摘要 TFT的器件特性是影响氧化物TFT驱动的LCD显示屏良率的关键因素。本文研究了氧化物TFT的关键特性参数(阈值,稳定性)对窄边框LCD显示屏的良率和可靠性的影响。氧化物TFT阈值过负,将会导致TFT无法正常关断,而使显示屏的外围移位寄存器(VSR)电路失效。另外,在显示区域用于像素驱动的氧化物TFT的高温和背光照射下阈值持续负向漂移,最终会导致显示区域的驱动TFT漏电流过大,从而使显示屏出现串扰和残影不良。 The characteristics of TFT are critical to the reliability of metal oxide-TFT drived LCD.The effect of V th and stability of oxide-TFT to the reliability of narrow-bezel LCD display were researched.The negative V th of the normal-on oxide-TFT can result in the failure of VSR scan circuits.Others,the negative-shift of the V th of TFT in pixel at high temperature and under back-light illumination can cause the V th negative shift and results in the cross-talk or image-sticking because of the high leakage current of TFT.
作者 楼均辉 姜姝 吴天一 符鞠建 夏兴达 何泽尚 迟宵 应变 李喜峰 LOU Jun-hui;JIANG Shu;WU Tian-yi;FU Ju-jian;XIA Xing-da;HE Ze-shang;CHI Xiao;YING Bian;Li Xi-feng(Tianma Micro-electronics Group,Shanghai 201205,China;Key Laboratory of Advanced Display and System Applications of Ministry of Education,Shanghai University,Shanghai 200072,China)
出处 《发光学报》 EI CAS CSCD 北大核心 2018年第3期383-387,共5页 Chinese Journal of Luminescence
基金 国家高技术研究发展计划(863)(2015AA033406) 上海市科委项目(16JC1400602 17DZ2291500)资助~~
关键词 金属氧化物薄膜晶体管 阈值 LCD 可靠性 oxide TFT threshold-voltage(V th),LCD reliability
  • 相关文献

参考文献5

二级参考文献49

  • 1王旭迪,张永胜,胡焕林,汪力.深高宽比微结构的干法刻蚀[J].真空,2004,41(5):32-34. 被引量:8
  • 2Bae C D,Kim D J,Moon S. Aging dynamics of solution-processed amorphous oxide semiconductor field effect transistors[J].Appl Mater Inter,2010,(03):626-632.
  • 3Kim Y H,Han M K,Han J I. Effect of metallic composition on electrical properties of solution-processed indiumgallium-zinc-oxide thin-film transistors[J].IEEE Transactions on Electron Devices,2010,(05):1009-1014.
  • 4Nomura K,Ohta H,Takagi A. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J].Nature,2004.488-492.
  • 5Chen T C,Chang T C,Hsieh T Y. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor[J].Applied Physics Letters,2011,(02):022104-0221-3.
  • 6Kumar B,Gong H,Akkipeddi R. High mobility undoped amorphous indium zinc oxide transparent thin films[J].Journal of Applied Physics,2005,(07):073703-0731-6.
  • 7Park S K,Kim Y H,Han J I. All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors[J].Journal of Physics D:Applied Physics,2009.125102-1251-6.
  • 8Yang Y H,Yang S S,Kao C Y. Chemical and electrical properties of low-temperature solution-processed In-Ga-ZnO thin-film transistors[J].IEEE Electron Device Letters,2010,(04):329-331.
  • 9Kim C E,Cho E N,Moon P. Density-of-states modeling of solution-processed InGaZnO thin-film transistors[J].IEEE Electron Device Letters,2010,(10):1131-1133.
  • 10Kim G H,Ahn B D,Shin H S. Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors[J].Applied Physics Letters,2009,(23):233501-2331-3.

共引文献18

同被引文献18

引证文献4

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部