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基于ZnO/SiO_2/Si多层结构瑞利波的特性研究 被引量:2

Study on Characteristics of Rayleigh Wave Based on ZnO/SiO_2/Si Multilayered Structure
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摘要 利用射频(RF)磁控溅射法沉积(002)ZnO薄膜和SiO_2薄膜于Si基底,研制(002)ZnO/IDT/SiO_2/Si结构的声表面波延迟线,并通过3D有限元法仿真分析该结构所激发的瑞利波的声学特性,如相速度、机电耦合系数k^2等。通过实验验证,发现二者吻合较好。分析了ZnO薄膜的厚度对瑞利波特性的影响发现,当ZnO厚为8μm时,k^2取得最大值(为3.88%)。同时,分析了(110)ZnO/IDT/SiO_2/Si结构所激发瑞利波的声学特性,结果显示,当ZnO薄膜的厚为8μm时,k^2取得最大值(为5.5%)。 The surface acoustic wave(SAW)delay lines with(002)ZnO/IDT/SiO 2/Si structure are fabricated by depositing(002)ZnO films and SiO 2 films on Si substrate using RF magnetron sputtering method,meanwhile,the acoustic characteristics of Rayleigh wave generated by the(002)ZnO/IDT/SiO 2/Si structure,including the phase velocity,electromechanical coupling coefficient,are studied theoretically by the 3D finite element method(FEM).And the experimental results well agree with the numerical results.The influence of the thickness of ZnO thin films on the Rayleigh wave properties is analyzed,it is found that the maximum electromechanical coupling coefficient k 2 of 3.88%can be achieved when the thickness of ZnO film is 8μm.At the same time,the properties of Rayleigh wave generated by the(110)ZnO/IDT/SiO 2/Si structure are also analyzed.The results show that the maximum electromechanical coupling coefficient k 2 of 5.5%can be achieved when the thickness of ZnO films is 8μm.
作者 贾之杰 王艳 张淑仪 徐静 谢英才 水修基 JIA Zhijie;WANG Yan;ZHANG Shuyi;XU Jing;XIE Yingcai;SHUI Xiuji(School of Electronic Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210046,China;Lab.of Modern Acoustics,Institute of Acoustics,Nanjing University,Nanjing 210093,China)
出处 《压电与声光》 CAS CSCD 北大核心 2018年第2期231-234,239,共5页 Piezoelectrics & Acoustooptics
基金 国家青年科学基金资助项目(11304160) 江苏省高校自然科学基金资助项目(13KJB140008) 南京邮电大学基金资助项目(NY213018)
关键词 氧化锌(ZnO) 有限元仿真 相速度 机电耦合系数 Rayleigh wave ZnO finite element simulation phase velocity electromechanical coupling coefficient
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