温度对ErAlN薄膜晶体结构和电学性能的影响

Influence of Temperature on Crystal Structure and Electrical Properties of ErAlN Films

采用射频反应磁控溅射在蓝宝石(0001)衬底上沉积生长了掺杂Er的AlN薄膜。利用X线衍射仪(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)和阻抗分析仪对不同衬底温度下制备薄膜的晶体结构和电学性能进行了分析表征。结果表明,随着温度的增加,晶体取向和表面粗糙度愈来愈好,当温度继续上升时,晶体取向和表面粗糙度质量开始变差;电阻率和漏电流随着温度的增加性能先变优后下降。在衬底温度为200℃时,薄膜结构和电学性能最佳。

The Er-doped AlN films were deposited on(0001)sapphire substrates by radio frequency reactive magnetron sputtering.The X-ray diffraction(XRD),atomic force microscope(AFM),scanning electron microscope(SEM)and impedance analyzer were used to characterize the crystal structure and electrical properties of films prepared at different substrate temperature.The results indicated that the crystal orientation and surface roughness were getting better and better with the increase of substrate temperature,while the crystal orientation and surface roughness began to deteriorate when the temperature continued to rise,the properties of the resistivity and leakage current were getting better at the start with the increase of temperature and then the performance began to decline.The film structure and electrical properties are best when the substrate temperature is 200℃.