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自主研发、技术溢出与区域创新 被引量:5

Independent Research,Technology Spillover and Regional Innovation
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摘要 根据2000~2016年中国大陆31个省的面板数据,本文探讨了自主研发、技术溢出对区域技术创新的影响,实证结果表示:(1)自主研发与技术溢出是我国区域技术创新的主要途径,目前我国各省技术创新存在差距,且从长期变化趋势看差距呈扩大趋势;(2)地理因素对区域创新能力存在显著影响,R&D吸收能力、FDI技术溢出对创新的影响程度与人力资本高度相关,且自主研发相比FDI技术溢出对技术创新的影响更加显著;(3)FDI技术溢出对技术创新的影响存在双门槛效应,即当人力资本处于充足或稀缺阶段时,FDI技术溢出对技术创新的影响往往更明显;R&D吸收能力影响技术创新存在单门槛效应,即人力资本越多,R&D吸收能力对技术创新的影响越显著。因此应提高我国企业自主研发能力,制定人才激励政策并减少地区差异,从而使我国经济更加平稳健康的向前发展。 This paper chooses panel data of 31 provinces of mainland in China from 2000 to 2016 as samples,then discusses the effects of indigenous R&D and FDI tech-spillover on regional technological innovation theoretically and empirically.We have following results:(1)indigenous R&D and FDI tech-spillover is the main way of technology innovation in China,and we find that in the sample period,there is technology innovation gap among Chinese provinces,from the long-term trends,the gap is expanding;(2)computing Moran s index,we found that regional technology innovation ability in our country has the spatial correlation,geographical factors have significant influence on the regional innovation,also without considering other factors,the influence of R&D and FDI technology spillover on the technology innovation is related to the level of human capital;with considering other factors,compared to FDI technology spillover,the influence of indigenous R&D on technology innovation is more significantly;(3)with human capital as a transfer variable,find that the impact of FDI technology spillover to technology innovation is double threshold effect,when human capital is adequacy or scarce,FDI technology spillover effect on technology innovation is more prominent;the influence of absorptive capacity of R&D on technology innovation is single threshold effect,the more of the human capital,the influence of absorptive capacity of R&D on technology innovation is more significant.
作者 雷海 朱明侠 Lei Hai;Zhu Mingxia(School of International Trade and Economics,University of International Business and Economics,Beijing 100029,China)
出处 《工业技术经济》 CSSCI 北大核心 2018年第5期119-128,共10页 Journal of Industrial Technological Economics
关键词 自主研发(R&D) FDI技术溢出 PSTR模型 人力资本 技术创新 门槛效应 independent research and development FDI technology spillover PSTR model human capital technology innovation threshold effect
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