氧化钨纳米阵列的制备与紫外光电探测研究

Synthesis and UV photodetection properties of tungsten oxide nanowire arrays

采用真空热蒸发法在硅片上实现了大面积、形貌均匀氧化钨纳米阵列的合成。X射线衍射(XRD)和透射电子显微镜(TEM)结果均表明,所合成的氧化钨为单斜结构的W18O49,纳米线的生长方向为(010)晶向。利用介电泳技术,在叉指电极上实现了氧化钨纳米线的准定向排列和电极接触。研究了氧化钨纳米线的紫外光探测性能,发现其对365 nm的紫外光具有良好的响应能力。在1 V偏压下,氧化钨纳米线的紫外光响应度为6.67 A/W,响应时间和恢复时间分别为0.17 s和0.15 s。研究结果表明,氧化钨纳米线在高性能光电探测器应用中展示良好前景。

In this work,large-area and uniform tungsten oxide nanowire arrays were grown on silicon substrates by high temperature physical evaporation deposition method.The X-ray diffraction(XRD)and transimission electron microscope(TEM)results confirm that the nanowires as prepared exhibite a monoclinic structure and single-crystal(W18O49)as grown along the(010)direction.Furthermore,the tungsten oxide nanowire UV photodetector was fabricated by the dielectrophoresis method.Under 365 nm UV light irradiation and 1 V bias voltage,the photo responsivity of as fabricated photodetector is 6.67 A/W.The response and recovery time of tungsten oxide are 0.17 s and 0.15 s,respectively.This work indicates that tungsten oxide shows great potential opportunity in the high performance photodetection application.