摘要
静电放电损伤失效分析是电子制造企业分析产品质量问题和提高产品质量可靠性的难点和关键技术之一。总结梳理生产制造过程中常见的静电源和释放通路,研究元器件静电放电损伤的敏感结构,研究静电放电损伤的失效机理及其典型形貌特征,探讨静电损伤(ESD)、过电损伤(EOS)和缺陷诱发失效的鉴别方法。最后将这些方法应用在具体的失效案例中,为企业开展静电放电失效分析工作提供一种有效的鉴别分析方法。
Failure analysis for electrostatic discharge caused damage is one of the difficult and vital technologies for electrical manufacturers to solve the products’quality problem and improve the reliability.Common electrostatic sources and dissipation paths during assembling were concluded and classified.Electrostatic sensitive structures in electronic components were investigated.Meanwhile,failure mechanism and typical failure morphology features of electrostatic discharge caused damage were studied.Furthermore,discrimination methods for EOS/ESD and defects caused failures were discussed.Finally,a typical failure analysis case using the methods was illustrated.It affords an effective discrimination and analysis method of electrostatic discharge caused damage for electrical manufacturers.
作者
何胜宗
季启政
胡凛
王有亮
梁晓思
HE Shengzong;JI Qizheng;HU Lin;WANG Youliang;LIANG Xiaosi(No.5 Electronic Institute,Ministry of Industry and Information Technology,Guangzhou 510610,China;Beijing Orient Institute of Measurement and Test,Beijing 100086,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2018年第4期88-92,共5页
Electronic Components And Materials
基金
北京东方计量测试研究所刘尚合院士专家工作站静电研究基金(BOIMTLSHJD20161005)
广东省科技计划项目(2016A040403032)
广州市科技计划项目(201707010498)
关键词
失效机理
失效分析
静电放电
电子元器件
红外发射显微镜成像
失效鉴别
failure mechanism
failure analysis
electrostatic discharge
electronic components
infrared-emission microscope imaging
failure discrimination