高效本征薄层异质结(HIT)太阳电池技术研究进展

A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer(HIT)Solar Cells

高效本征薄层异质结(HIT)是由本征钝化层沉积在a-Si/c-Si界面处组成,这种硅异质结(SHJ)结构由于钝化性能好,实际效率值往往比同质结电池更高。本文首先介绍了HIT高效电池发展现状、电池基本结构的特点,然后从制备工艺、钝化原理、能带带阶等几个方面对衬底层、非晶硅层(本征/掺杂)、TCO薄膜以及金属格栅电极展开讨论,并对未来高效HIT电池的工业化发展趋势做了展望。

Heterojunction with intrinsic thin-layer(HIT)consist of thin amorphous silicon layers deposited on crystalline silicon wafers,which forms a silicon heterojunction(SHJ)structure with the major advantages of full exploitation of the excellent passivation properties of a-Si∶H films,and consequently,the energy conversion efficiencies higher than homogenous cells.The paper provides an introduction on the development and the structure of the HIT solar cells,and a discussion upon the wafer layers,the a-Si(undoped/doped)layers,the TCO(transparent conducting oxides)films and the metal grid electrodes from the perspectives of fabrication processes,the principle of passivation,and the band gap.Finally a prospect on the future trends are also proposed.