一种单大马士革结构超厚铜集成电感

A Ultra-thick Copper Based Inductor Using Single Damascene Process

成功开发超厚介质膜的淀积和刻蚀工艺、超厚金属铜的电镀和化学机械研磨等工艺,采用与CMOS完全兼容的铜互连单大马士革工艺制作了超厚金属铜集成电感。该超厚金属铜电感在1~3 GHz频率范围内的电感值均匀,在2.5 GHz频率下的Q值达到11。并且进一步研究了线圈圈数、金属线宽和金属间距对电感值和Q值的影响。

The technology of deposition and etching of super thick dielectric film,electrochemical plating(ECP)of super thick copper and chemical-mechanical polishing(CMP)were successfully developed in this paper.Super-thick copper integrated inductors were fabricated using copper-interconnected Single Damascus processes that are fully CMOS compatible.The inductance of the super thick copper inductor is uniform in the range of 1~3 GHz,and the Q value at 2.5 GHz is 11.In addion,the influence of coil number,metal line width and metal distance on the value of inductance and Q is further studied.