新型单发射腔高功率半导体激光器封装结构特性研究

Study on the Characteristics of the Novel Single-emitter High Power Semiconductor Laser

多引线结构是现有大多数C-Mount封装半导体激光器的基本结构,其固定的正负极仅可实现特定的功能,无法满足不同领域使用半导体激光器的要求。因此,介绍了一种波长为808nm,输出功率为8W的C-Mount封装结构的高功率半导体激光器,此种封装结构可改变电极方向,拥有散热性能优良,持续输出功率稳定的特性,并且结构简单,性能稳定可靠。通过大量实验研究表明,在25℃的稳定连续电流条件下长时间的寿命测试,未出现功率衰减以及灾变性光学腔面损伤(COMD)的现象,并且具有较低的阈值电流Ith以及线性增加的斜率效率。

The structure of multilead is the fundamental structure for most of the C-Mount package semiconductor laser diode;fixed positive and negative electrode can only be achieved specific function;but unable to meet the requirements of different areas of the use of semiconductor lasers.So a C-Mount package structure is introduced for high power semiconductor laser diode which wavelength is 808nm;the output power is 8W.This type can change the direction of electrode,it also has excellent heat-dissipation,steady output power,simple in structure,more stable and morereliable.Through a large number of experiments,run 2000h on condition that stable continuous wave(CW)at 25 degrees Celsius;and there is no power attenuation and catastrophic optical mirror damage(COMD);there are also lower threshold current(Ith),slope efficiency(SE)increasing linearly and more high and more stable output power.