基于标准CMOS工艺线性APD倍增区的优化仿真

Simulation of the multiplication zone for linear APD based on standard CMOS process

采用标准CMOS工艺制备的n^+-p-π-p^+结构的线性APD,其倍增区p层的掺杂分布极大地影响着器件的性能.采用Silvaco仿真软件对倍增区p层进行了设计仿真,研究了p层的注入剂量和注入峰值浓度深度对器件特性的影响.仿真结果表明,设定器件增益为50,在p层的最佳注入剂量为1.82×10^(12)/cm^2,峰值浓度深度为2.1μm左右的最佳工艺条件下,器件的工作电压为73.1 V,过剩噪声因子为4.59,过剩噪声指数在0.34~0.45之间(波长λ=800 nm),优于目前已报道的结果.通过工艺的优化,器件的性能可以得到进一步提高.

he doping distribution in the multiplication zone of n+-p-π-p+structured linear avalanche photodiode(APD)based on standard CMOS process greatly determines the device performance.The influences of implanting dose and the depth of its peak concentration of the p-layer on device characteristics are simulated using Silvaco.The simulation results show that,at a given gain of 50,the optimized doping dose of P layer is 1.82×10 12/cm 2 with depth of peak concentration 2.1μm.Under optimized conditions,the reverse bias voltage is 73.1 V,the excess noise factor is 4.59,and the excess noise index is 0.34~0.45(λ=800 nm),which are better than those reported.The performance of the APD may be further improved through process optimization.