不同偏置下铁电存储器总剂量辐射损伤效应

Ferroelectric memory ionizing radiation effects at different biases

对两款商用铁电存储器进行了钴源辐射试验,研究了不同偏置条件下铁电存储器的总剂量效应。使用了超大规模集成电路测试系统测试了铁电存储器的直流、交流、功能参数,分析了辐射敏感参数在辐射过程中的变化规律,研究了器件功能失效和参数退化的原因。研究表明,将铁电存储器置于不同的偏置条件下,铁电存储器的功能失效阈值不同,原因可能是偏置不同造成了辐射损伤的短板电路模块不同。

Two types of ferroelectric random memory are irradiated and annealed by 60Coγ-rays.Total Ionizing Dose(TID)failure mechanism of the device is analyzed at different biases.DC,AC and function parameters of the memory are tested through irradiating and annealing by Very Large Scale Integrated circuit(VLSI)test system.The radiation-sensitive parameters are obtained through analyzing the test data.The results show that the functional failure thresholds of ferroelectric memory are different at different biases,because different biases lead to different fragile circuit modules due to irradiation damage.