半导体器件辐射效应数值模拟技术研究现状与发展趋势

Current Research and Development Tendencies of Modeling and Simulation of Radiation Effects in Semiconductor Devices

半导体器件辐射效应数值模拟技术主要研究辐射与材料相互作用的粒子输运模拟、器件内部辐射感生载流子漂移扩散的器件级模拟及器件性能退化对电路功能影响的电路级模拟等,是抗辐射加固设计和抗辐射性能评估中的关键技术。随着先进微电子技术的快速发展,新材料、新结构和新器件的应用为辐射效应建模与数值仿真带来了新挑战。辐射效应数值模拟涉及材料学、电子学和核科学的交叉领域,技术难度大,建模和仿真比较复杂,一些瓶颈问题尚未完全解决。围绕粒子输运模拟、器件级辐射效应数值模拟和电路级辐射效应数值模拟3个方面,梳理急需解决的关键技术问题,介绍半导体器件辐射效应数值模拟技术的发展趋势。

Modeling and simulation of radiation effects in semiconductor devices is mainly employed in the particle transport simulation for the interaction between radiation and materials,the device simulation for the drift and diffuse of carriers induced by irradiation inside the devices,the circuit simulation for estimating circuit functions due to the performance degradation of devices,etc.It is an essential technique for radiation-hardened design and performance evaluation.Along with the rapid development of advanced microelectronics,the application of new materials,new structures and new devices bring new challenges to the modeling and simulation of radiation effects.The simulation of radiation effects relates to the inter-discipline fields of materials,electronics and nuclear technology,which increases the technical difficulty and some problems are still being left unsolved.This paper discusses detaily in the critical technical issues of the modeling and simulation of radiation effects and its development tendencies in particle transport simulation,device simulation and circuit simulation.