围栅硅纳米线MOSFET器件的仿真研究

Simulation Study on Gata-all-around MOSFET

随着大规模集成电路的发展,IC工艺特征尺寸逐渐进入了纳米量级,与此伴随而生了不可避免的短沟道效应(SCE)如:漏至势垒降低效应、阈值电压滚降效应、亚阈斜率退化等。围栅硅纳米线MOSFET(GAA-MOSFETS)器件具有优良的栅控能力和载流子输运特性,被视为可以将器件尺寸缩小到极限尺寸的理想器件结构。通过将量子运输效应应用到器件建模中,针对P型GAAMOSFET器件展开研究,探讨了GAA-MOSFET器件的能带结构、沟道直径等参数对阈值电压、亚阈值摆幅等参数的影响,并利用Silvaco TCAD软件的数值计算来对GAA-MOSFET器件结构与性能进行仿真验证。

With the development of large-scale integrated circuits,the feature size of IC process has gradually entered the nanometer scale,and accompanied by inevitable short channel effect(SCE),such as drain-to-barrier reduction effect,threshold voltage roll-off effect,subthreshold slope degradation and so on.Gate-all-around MOSFET(GAA-MOSFETs)devices have excellent gate control capability and carrier transport characteristics,and are considered to be ideal device structures that can reduce the device size to the limit size.By applying quantum transport effect to device modeling,the effects of energy band structure and channel diameter of p-type GAA-MOSFET device on threshold voltage and subthreshold swing are discussed.the structure and performance of GAA-MOSFET device are simulated and verified by numerical calculation of Silvaco TCAD software.