碳纳米管阵列高度分布的唯象分析模型

Phenomenological Model of Height Distribution in Carbon Nanotube Array

本文提出了一个唯象模型,用于解释常压生长条件下碳纳米管阵列高度分布变化的原因,分析的结果指出由于更多的碳源分子在催化剂的边缘吸附,一方面促进了碳纳米管的生长,另一方面也会带来更多的裂解产物在催化剂边缘吸附,使得边缘的催化剂受到的毒化作用增强,这两方面的共同作用导致了常压生长条件下碳纳米管阵列呈现出不同的形貌特征。

In this report,a phenomenological model was proposed to uncover the height distribution within carbon nanotube array grown under the atmospheric pressure,the model analysis shows that more carbon source,compare to that at array center,absorbed at array edge not only promoted the carbon nanotube growth,but also hindered the growth due to more pyrolysis caused the catalyst deactivation,which together leads to different carbon nanotube array profile.