摘要
NiFe薄膜广泛用于制作磁阻器件。本文系统研究了Ta缓冲层厚度、NiFe薄膜厚度、退火温度和退火时间对厚度小于20nm的超薄NiFe薄膜AMR效应的影响。研究结果表明:随着Ta缓冲层厚度、NiFe薄膜厚度以及退火温度的增加,AMR系数呈现先升高后降低的变化规律。最佳的超薄NiFe薄膜AMR效应的工艺条件为,Ta缓冲层为5nm,NiFe薄膜为11nm,退火温度为350℃,退火时间为3.5h。本文工作可以支持超薄NiFe薄膜磁阻器件的开发。
NiFe films have great applications in magnetoresistance devices.In this paper,the effects of Ta buffer layer thickness,NiFe film thickness,annealing temperature and annealing time on the AMR effect of ultrathin NiFe thin films with thickness less than 20 nm were studied systematically.The results show that with the increase of the thickness of Ta buffer layer,the thickness of NiFe thin film and the annealing temperature,the performance of AMR first increases and then decreases.The optimum conditions for the AMR effect of the ultra thin NiFe thin film are that the thickness of Ta buffer layer is 5 nm,the thickness of NiFe thin film is 11 nm,the annealing temperature is 350℃,and the annealing time is 3.5 h.This work can support the development of magnetoresistance device with ultrathin NiFe thin films.
作者
胡凌桐
张万里
彭斌
张文旭
HU Lingtong;ZHANG Wanli;PENG Bin;ZHANG Wenxu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2018年第8期26-29,35,共5页
Electronic Components And Materials
基金
国家重点研发计划项目(2017YFB0406400)
