基于黑硅吸收层和多层纳米组合薄膜的红外探测器的制备及研究

Preparation and Study of IR Detector Sensitive Element with Multi-Layer Composite Nanometer Films Based on the Black Silicon Absorpotion

采用sol-gel(溶胶-凝胶)技术在SOI基底上制备了多层组合结构的纳米薄膜(PT/PZT/PT^PT/PZT/PT),采取金属键合技术,将薄膜作为敏感元件翻转与另一高热阻抗基底对接键合,然后腐蚀SOI上的底层硅和氧化硅,最终SOI材料上制备出具有锥状森林结构的黑硅作为吸收层得到一种新颖的敏感元件。重点开展高检测性能的薄膜结构和黑硅吸收层的加工工艺及其敏感机理研究,为实现气体传感器微型化、集成化与批量生产奠定技术基础。

The methods of sol-gel is taken to fabricate the multi-layerthin film with PT/PZT/PT^PT/PZT/PT structure on SOI substrate,and which is upturned to 180 degree as the sensitive element.Meanwhile the methods are taken for bonding to bond a high thermal impedance substrate with the sensitive element,and then the down layer silicon and oxided silicon are etched in turn on SOI substrate.Finally,the silicon on the top layer of SOI is fabricates as the black silicon absorption layer with the sharp conical spike forest structure.Accordingly,we obtain a novel sensitive component.This research is expected to provide a solid theoretical foundation and strong technical support for the miniaturization technology,integration technology and batch production technology of the IR thin film gas sensors.